Laser full cutting technology

The process includes feeding the laser to the front (pattern side) of the thinned wafer (less than 200 µ m) once, or irradiating the wafer multiple times until the tape is cut. Laser full cutting can increase the output because it can increase the feed speed.

Process example

Thin wafer cutting of GaAs compound semiconductor

In the cutting process, GaAs wafer is easy to be damaged and cracked because the material is very brittle. Therefore, it is difficult to use the existing blade to improve the cutting speed. Using laser full cutting, processing can be carried out at a feed speed ten times faster than blade cutting, so as to improve the output. (this is just an example. The actual speed depends on the wafer to be processed.)

Thinning silicon wafer full cutting and scribing

As the wafer becomes thinner, the fragmentation and cracking in the cutting process have a greater impact on the chip strength. Therefore, the difficulty of cutting is increasing because of the need to better control the process of fragmentation. In addition, the number of devices using chip film (DAF) as bonding material to stack thinned chips is increasing. Therefore, while controlling the occurrence of burrs, high-quality cutting of wafers with DAF on the back has become a problem.